Supported ParametersΒΆ
The following parameters are available for unstrained binaries, ternaries, and quaternaries, although not every material has every parameter:
Parameter |
Description |
|---|---|
CBO |
conduction band offset energy relative to InSb VBO |
CBO_Gamma |
Gamma-valley conduction band offset energy relative to InSb VBO |
CBO_L |
L-valley conduction band offset energy relative to InSb VBO |
CBO_X |
X-valley conduction band offset energy relative to InSb VBO |
Delta_SO |
split-off energy |
Eg |
bandgap energy |
Eg_Gamma |
Gamma-valley bandgap energy |
Eg_Gamma_0 |
Gamma-valley bandgap energy at 0 K |
Eg_L |
L-valley bandgap energy |
Eg_L_0 |
L-valley bandgap energy at 0 K |
Eg_X |
X-valley bandgap energy |
Eg_X_0 |
X-valley bandgap energy at 0 K |
Ep |
Ep interband matrix element |
F |
F Kane remote-band parameter |
P |
|
VBO |
valance band offset energy relative to InSb VBO |
a |
lattice parameter |
a_300K |
lattice parameter at 300 K |
a_c |
conduction band deformation potential |
a_v |
valance band deformation potential |
alpha_Gamma |
Gamma-valley Varshni alpha parameter |
alpha_L |
L-valley Varshni alpha parameter |
alpha_X |
X-valley Varshni alpha parameter |
b |
b shear deformation potential |
beta_Gamma |
Gamma-valley Varshni beta parameter |
beta_L |
L-valley Varshni beta parameter |
beta_X |
X-valley Varshni beta parameter |
c11 |
c11 elastic constant |
c12 |
c12 elastic constant |
c44 |
c44 elastic constant |
d |
d shear deformation potential |
dielectric |
static relative dielectric permittivity (i.e. <~ 1 THz) |
dielectric_high_frequency |
high-frequency dielectric permittivity (i.e. >~ 100 THz) |
electron_affinity |
electron affinity energy |
luttinger1 |
first Luttinger parameter |
luttinger2 |
second Luttinger parameter |
luttinger3 |
third Luttinger parameter |
luttinger32 |
difference between third and second Luttinger parameters (luttinger3 - luttinger2) |
luttinger4 |
|
meff_SO |
split-off band effective mass |
meff_e_Gamma |
electron effective mass in the Gamma-valley |
meff_e_Gamma_0 |
electron effective mass in the Gamma-valley at 0 K |
meff_e_L_DOS |
electron effective mass density of states in the L-valley |
meff_e_L_long |
electron effective mass in the longitudinal direction in the L-valley |
meff_e_L_trans |
electron effective mass in the transverse direction in the L-valley |
meff_e_X_DOS |
electron effective mass density of states in the X-valley |
meff_e_X_long |
electron effective mass in the longitudinal direction in the X-valley |
meff_e_X_trans |
electron effective mass in the transverse direction in the X-valley |
meff_hh_100 |
heavy-hole effective mass in the <100> direction |
meff_hh_110 |
heavy-hole effective mass in the <110> direction |
meff_hh_111 |
heavy-hole effective mass in the <111> direction |
meff_lh_100 |
light-hole effective mass in the <100> direction |
meff_lh_110 |
light-hole effective mass in the <110> direction |
meff_lh_111 |
light-hole effective mass in the <111> direction |
meff_so |
split-off band effective mass from the literature |
n_A |
refractive index constant A |
n_B |
refractive index constant B |
nonparabolicity |
Kane band nonparabolicity parameter for the Gamma-valley |
refractive_index |
|
thermal_expansion |
lattice parameter thermal expansion coefficient |
The following parameters are available for strained materials:
Parameter |
Description |
|---|---|
CBO |
conduction band offset energy relative to InSb VBO |
CBO_Gamma |
Gamma-valley conduction band offset energy relative to InSb VBO |
CBO_L |
L-valley conduction band offset energy relative to InSb VBO |
CBO_X |
X-valley conduction band offset energy relative to InSb VBO |
CBO_hydrostatic_strain_shift |
shift in the conduction band offset energy due to the hydrostatic strain component |
CBO_strain_shift |
total shift in the conduction band offset energy due to strain |
Eg |
bandgap energy |
Eg_hh |
bandgap energy between the conduction band and the heavy-hole band |
Eg_lh |
bandgap energy between the conduction band and the light-hole band |
Eg_strain_shift |
total shift in the bandgap energy due to strain |
VBO |
valance band offset energy relative to InSb VBO |
VBO_hh |
heavy-hole valance band offset energy |
VBO_hh_strain_shift |
total shift in the heavy-hole valance band offset energy due to strain |
VBO_hydrostatic_strain_shift |
shift in the valance band offset energy due to the hydrostatic strain component |
VBO_lh |
light-hole valance band offset energy |
VBO_lh_strain_shift |
total shift in the light-hole valance band offset energy due to strain |
VBO_strain_shift |
total shift in the valance band offset energy due to strain |
VBO_uniaxial_strain_shift |
shift in the valance band offset energy due to the uniaxial strain component |
electron_affinity |
electron affinity energy |
strain_in_plane |
strain in the in-plane directions |
strain_out_of_plane |
strain in the out-of-plane direction (the strain measured by X-ray diffraction symmetric omega-2theta scans) |
substrate_a |
substrate lattice parameter |